Products

Non-volatile magnetic memory STT-MRAM:

MRAM technology has great advantages for high reliability applications such as intelligent systems, such as non-volatile and fast read/write capability.End-users need high reliability memory products designed specifically for critical applications to meet system reliability.

Technical Feature:

  • High speed:
  • Speed of DRAM and 10000 times faster than Flash
  • High wipe number: Ten million times more than the NAND Flash
  • No lose when power supply drop: MRAM power can save the data
  • low-power:Power on only when reading or writing data
  • Radiation resistance to bad environment
  • >100Krad
  • >80MeV•cm2•mg-1
  • CMOS good compatibility

Interface Density Max Operating Frequency Voltage range Operatiing temperature range Power Reliability Package
QSPI 2M 40MHz: Read  133MHz: Fast Read 2.7~3.6V -40℃~85℃ Sleep 10uA
Standby 30uA Active 10mA
Retention: >20yeas@85℃  Endurance: 10E9 SOP8
4M 133MHz 2.7~3.6V -40℃~85℃ Sleep 10uA
Standby 30uA  Active 10mA
SOP8  USON8
16M 133MHz 2.7~3.6V -40℃~85℃ Sleep 1uA
Standby 30uA  Active 10mA
SOP8
OSPI 4M 30MHz: Read  166MHz: Fast Read 2.7~3.6V -40℃~85℃ Sleep 10uA
Standby 500uA  Active 30mA
SOIC16
64M 30MHz: Read  100MHz: Fast Read 2.7~3.6V -40℃~85℃ Sleep 10uA
Standby 900uA  Active 30mA
BGA24
256M 30MHz: Read  80MHz: Fast Read 2.7~3.6V -40℃~85℃ Sleep 10uA
Standby 10mA  Active 30mA
BGA24
ASRAM 2M Read: 30ns  Write: 100ns Analog: 3.3V
Digital: 1.1V
-55℃~125℃ Sleep 20uA
Standby 90uA  Active 7mA
CSOP32  TSOP2
256M Read: 30ns  Write: 100ns Analog: 3.3V
Digital: 1.1V
-55℃~125℃ Sleep 96uA
Standby 8mA  Active 30mA
BGA209
 

Application:

  • industrial automation
  • smart meters
  • aerospace
  • medical apparatus and instruments
  • gaming devices
  • Internet devices
  • disk array